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| DATA SHEET DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES * Low noise figure NF = 0.8 dB TYP. at f = 2 GHz (1.25) 0.60 0.65 +0.1 0.3+0.1 -0.05 0.3 0.4-0.05 2 2.10.2 1.250.1 3 0.3+0.1 -0.05 0.15+0.1 -0.05 0.3+0.1 -0.05 (1.3) * High associated gain 2.00.2 Ga = 13.5 dB TYP. at f = 2 GHz * Gate width : Wg = 400 Pm * 4 pins super mini mold * Tape & reel packaging only available V52 1 4 0 to 0.1 ORDERING INFORMATION PART NUMBER NE76118-T1 0.90.1 QUANTITY 3 Kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Source), Pin 4 (Drain) face to perforation side of the tape. Embossed tape 8 mm wide. Pin 1 (Source), Pin 2 (Gate) face to perforation side of the tape. NE76118-T2 3 Kpcs/Reel. PIN CONNECTIONS 1. Source 2. Gate 3. Source 4. Drain * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: NE76118) ABSOLUTE MAXIMUM RATINGS (TA = 25 qC) Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGSO VGDO ID Ptot Tch Tstg 5.0 -5.0 -6.0 IDSS 130 150 -65 to +150 V V V mA mW qC qC Document No. P11129EJ2V0DS00 (2nd edition) Date Published January 1997 N Printed in Japan (c) 1996 NE76118 RECOMMENDED OPERATING CONDITION (TA = 25 qC) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 3 10 MAX. 4 20 0 Unit V mA dBm ELECTRICAL CHARACTERISTICS (TA = 25 qC) CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current Gate to Source Cut off Voltage Transconductance Noise Figure Associated Gain Noise Figure Associated Gain SYMBOL IGSO IDSS VGS(off) gm NF Ga NF Ga 9.5 MIN. 30 0.5 20 TYP. 45 0.8 13.5 0.9 10.5 1.4 MAX. 10 100 3.0 UNIT TEST CONDITIONS VGS = 5 V VDS = 3 V, VGS = 0 V VDS = 3 V, ID = 100 PA VDS = 3 V, ID = 10 mA f = 2 GHz VDS = 3 V ID = 10 mA, PA mA V mS dB dB dB dB f = 4 GHz IDSS rank is specified as follows. K : 30 to 100 mA M : 50 to 100 mA 2 NE76118 TYPICAL CHARACTERISTICS (TA = 25 qC) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 250 Ptot - Total Power Dissipation - mW 80 200 ID - Drain Current - mA 60 -0.2 V VGS = 0 V 150 40 100 -0.4 V 50 20 -0.6 V -0.8 V -1.0 V 0 50 100 150 200 0 1 2 3 4 5 TA - Ambient Temperature - C VDS - Drain to Source Voltage - V DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE FORWARD INSERTION GAIN vs. DRAIN CURRENT 80 VDS = 3 V VDS = 3 V |S21S|2 Forward Insertion Gain - dB 20 f = 1 GHz 15 f = 2 GHz ID - Drain Current - mA 60 40 10 20 5 0 -2.0 0 -1.0 VGS - Gate to Source Voltage - V 0 1 2 3 5 7 10 20 ID - Drain Current - mA 3 NE76118 S-PARAMETER VDS = 3 V, ID = 10 mA FREQUENCY MHZ MAG. S11 ANG. (deg.) MAG. S21 ANG. (deg.) MAG. S12 ANG. (deg.) MAG. S22 ANG. (deg.) dB MSG K 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 .992 .979 .964 .943 .923 .911 .900 .894 .885 .868 .842 .817 .783 .759 .734 .712 .686 .680 .667 .641 .612 .589 .570 .556 .540 .520 12.2 14.7 17.6 20.2 22.6 24.9 27.6 29.8 32.5 35.1 37.1 39.9 42.2 45.0 47.6 50.0 51.5 52.6 55.1 58.1 61.0 63.8 66.5 68.9 70.5 72.6 3.647 3.618 3.594 3.536 3.510 3.492 3.477 3.473 3.453 3.410 3.359 3.325 3.269 3.235 3.197 3.152 3.086 3.026 3.013 2.999 2.978 2.944 2.904 2.862 2.809 2.768 162.5 158.3 154.7 151.0 148.4 145.2 142.4 139.0 135.8 132.2 129.3 125.9 122.8 119.6 116.6 113.3 110.2 107.8 105.2 102.1 99.3 96.3 93.5 90.7 88.0 85.3 .020 .024 .027 .032 .034 .038 .043 .046 .049 .054 .057 .061 .064 .067 .070 .074 .075 .077 .081 .085 .089 .092 .095 .099 .102 .107 83.0 83.3 81.7 80.5 81.6 78.7 77.7 76.9 76.0 75.2 74.0 72.9 72.0 71.1 70.1 70.0 68.7 68.2 68.3 68.2 67.3 67.9 67.0 66.9 66.4 66.8 .765 .759 .757 .747 .739 .736 .727 .734 .724 .724 .712 .707 .692 .689 .676 .676 .663 .653 .644 .640 .631 .627 .623 .620 .614 .602 5.9 7.3 9.1 10.0 11.5 12.0 13.8 14.3 16.0 17.3 18.9 20.1 21.0 22.2 22.7 23.9 25.0 26.7 27.7 29.4 30.6 32.0 32.9 34.1 35.1 36.3 22.6 21.8 21.2 20.5 20.1 19.7 19.1 18.8 18.5 18.0 17.7 17.4 17.1 16.8 16.6 16.3 16.1 15.9 15.7 15.5 15.3 15.1 14.9 14.6 14.4 14.1 .17 .23 .29 .38 .41 .47 .47 .49 .50 .52 .58 .63 .70 .73 .78 .80 .87 .89 .89 .89 .92 .93 .95 .95 .97 .98 4 NE76118 S-Parameter VDS = 3 V, ID = 10 mA START 100 MHz, STOP 3 GHz, STEP 100 MHz S11 1.0 0.5 2.0 MARKERS 1: 1 GHz 2: 2 GHz 0 2 1 -0.5 -1.0 -2.0 S22 1.0 0.5 2.0 0 2 1 -0.5 -1.0 -2.0 5 NE76118 RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. For more details, refer to our document "SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL" (C10535E). Soldering process VPS Soldering conditions Package peak temperature : 215 C, Time : 40 seconds MAX. (200 C MIN.), Number of times : 2, Number of days : not limited* Soldering bath temperature : 260 C MAX., Time : 10 seconds MAX., Number of times : 1, Number of days : not limited* Peak package's surface temperature: 230 C or below, Reflow time: 30 seconds or below (210 C or higher), Number of reflow process: 2, Exposure limit*: None Terminal temperature: 230 C or below, Flow time: 10 seconds or below, Exposure limit*: None Symbol VP15-00-2 Wave soldering WS60-00-1 Infrared ray reflow IR30-00-2 Partial heating method * Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 C and relative humidity at 65 % or less. Note Do not apply more than a single process at once, except for "Partial heating method". PRECAUTION Avoid high static voltage and electric fields, because this device is MES FET with GaAs shottky barrier gate. 6 NE76118 [MEMO] 7 NE76118 Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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